Mustafa Kulakçı received his bachelor’s degree in Physics Department from Middle East Technical University (METU). From same university and department he received his master degree, then he received Ph.D. degree in 2012 on the implementation of Si nanostructures in optoelectronics and photovoltaic applications. In 2013 he became a member of Institute of Earth and Space Sciences and physics Department of Eskişehir Technical Universty (formerly a part of Anadolu University). Being there he has enlarged his research interests towards epitaxial growth, fabrication and characterization of group III-V semiconductor devices. Recently, he has devoted much interest on GaAs based group III-V thin film flexible solar cells.
Title and Abstract of the Speech:
GaAs based III-V thin film flexible solar cells by epitaxial lift off (ELO) technique
Eskişehir Technical University, Turkey
III-V compunds are not only the basic materials for modern optoelectronic devices but also building blocks for modern record breaking solar cells among the photovoltaic materials by a wide margin. However, high substrate and fabrication costs limit their uses to the specific applications such as Space or concentrator photovoltaics that are more tolerant to cell cost. Recently, exfoliation and transfer of epitaxially grown active cell on to the new carrier platforms (like polyimide and metal foils) by using ELO technique without sacrifying substrate for subsequent growth and cell efficiency has become a very promising approach to effectively reduce the high quality substrate cost which can holds over 80% in III-V cell technology. The talk will be on cost effective GaAs based group III-V lightweight thin film flexible solar cells using ELO and HELO technique.