Hariharsudan S. Radhakrishnan



Hari Sivaramakrishnan is currently working as Principal Member of Technical Staff in the PV technology & Energy systems group at IMOMEC (i.e., an associated lab from imec at UHasselt), and is responsible for the management of multiple R&D projects, and for coordinating cross-team tandem activities within the group. Hari graduated from Nanyang Technological University (NTU), Singapore in 2006 with B.Eng. (hons.) in Electrical and Electronics Engineering. In 2009, he obtained his dual M.Sc. degrees (magna cum laude) in Nanoscience and Nanotechnology from TU Delft, the Netherlands and KU Leuven, Belgium. From 2009 to 2014, he pursued his Ph.D. research on porous silicon-based gettering and epitaxial Si lift-off for solar cell applications at KU Leuven and imec. He received the EMRS Young Scientist Award in 2012 and the imec scientific excellence award in 2014. As a researcher, he has garnered experience in a wide range of fields from Si materials to modules, systems, and applications. He has co-authored more than 40 publications and holds 2 patents (both related to Si heterojunction technology). He has been involved in more than 12 public and industry-funded cross-organizational projects over the last 10 years. Currently, he is leading the development of the next generation industrial large-area perovskite-silicon tandem solar cells and modules and is also responsible for shaping the strategy of this focus area.


State-of-the-art of Si heterojunction technology
The next PV cell technology node after PERC will be based on passivating contacts, namely, the low-temperature Si heterojunction technology (HJT) and the high-temperature tunnel-oxide passivating contacts technology (TOPCon). The PV industry appears to be betting on both of these high efficiency technologies. While the latter is considered to be an evolution from PERC technology, the HJT process flow is simpler and has the potential for higher efficiencies compared to TOPCon. In fact, the current world record efficiency is held by a HJT cell with a back-contacted design, fabricated by Kaneka, reaching 26.7%. Nevertheless, costs reductions (both OPEX and CAPEX) need to continue for HJT to be competitive. In this talk, an overview of the state-of-the-art of Si HJT technology in research and industry will be given, touching on both the front/back contacted (FBC) and interdigitated back-contacted (IBC) designs. The aspects of this technology being addressed in the international collaboration project between METU-GÜNAM and imec/imomec under the 1004 program will also be highlighted.

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