Muhammad Usman

National Centre for Physics


Muhammad Usman received the M.Sc. and M.Phil degrees in Physics from Quaid-i-Azam University, Islamabad, Pakistan in 2003 and 2005, respectively. He received Ph.D. degree in Microelectronics and Applied Physics from Royal Institute of Technology (KTH), Sweden in 2012. He is a senior faculty member and presently working as head of Ion Beam Applications (IBA) division in National Centre for Physics, Islamabad, Pakistan. In addition, he is a visiting scientist at the KTH (Sweden) under a collaborative Swedish Research Council (Vetenskapsrådet) project. He is a Pakistani project leader on a collaborative project on PERT solar cells with The Center for Solar Energy Research and Applications (GÜNAM) in Middle East Technical University (METU), Ankara, Turkey.
In recent years, he received several international and national research grants and established Solid State Electronic Devices laboratory in NCP. Dr. Usman has more than 55 research articles on his credit in international journals of high repute. He has delivered many invited talks in national and international conferences and workshops. He had also been involved in the organization of several national and international scientific events in his institute. Furthermore, he is a regular member of the international conference on radiation and emission in materials (ICREM) Thailand since its inception in 2018.
His main research interests are semiconductor materials, device physics and simulations, ion beam physics and its applications in materials sciences, and radiation effects in electronic devices.


Energetic ions produced in an ion beam accelerator cause many physical and chemical changes in the target material upon their interaction. They are usually employed for synthesis, modification, and analysis of materials to exploit various engineering and scientific applications. Semiconductor industry is the biggest user of ion beams for their controllable energy, dose (fluence) and species; to dope the semiconductors, tune the lifetime, analyze the material, and test the radiation hardness of electronic devices. The ions carrying keV to MeV energy impacting the target either penetrate (Ion Implantation, Ion Beam Modification of Materials) or scatter from it (Ion Beam Analysis) carrying useful information about the material, depending on the incident energy and geometry. The basic mechanism of interaction is the loss of energy via electronic or nuclear stoppings of ions in the target. The complex specific effects of interactions produce the destructive modification in the materials as well as nondestructively analyze the elemental composition of the target making ion beams an essential tool for the semiconductor industry. In this talk, the basic mechanisms of ion-solid interactions, a broader review of the usual applications of ion beams in scientific research and a detailed usage in the semiconductor industry will be discussed.

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